Nexperia announced its first silicon carbide (SiC) MOSFETs with the release of two 1200 V discrete devices in 3-pin TO-247 packaging with RDS(on) values of 40 mΩ and 80 mΩ. NSF040120L3A0 and NSF080120L3A0 are the first in a series of planned releases which will see Nexperia’s SiC MOSFET portfolio quickly expand to include devices with a variety of RDS(on) ​​​​​​​ values in a choice of through-hole and surface mounted packages.

LEM has launched the HAH3DR S07/SP42, a new compact current sensor designed for 800V three-phase power modules. Developers of automotive traction inverters are increasingly using three-phase power modules such as the popular and widely proven Hybridpack Drive from Infineon. These modules are now adopting the more efficient SiC MOSFET technology, allowing vehicles to use 800V battery systems that offer faster charging and longer driving range.

Infineon Technologies AG announced the expansion of its CoolSiC 1200 V and 2000 V MOSFET module families with a new industry-standard package. The proven 62mm device is designed in half-bridge topology and is based on the recently introduced and advanced M1H silicon carbide (SiC) MOSFET technology.

Toshiba Electronic Devices & Storage Corporation has launched “SSM10N961L,” a low on-resistance, 30V N-channel common-drain MOSFET, suitable for devices with USB and for protecting battery packs. Further Information about the new product is found in the article.

DigiKey, a global commerce distributor offering the largest selection of technical components and automation products in stock for immediate shipment, announced it won four MarCom Awards in the 2023 international creative competition for marketing and communication professionals, including two platinum awards (highest honor), one gold award and one honorable mention.

In late November, the pan-European REFORMERS research project, funded for five years under the EU's Horizon Europe program, was officially kicked-off in Bruxelles. The project focuses on the development, realization and roll-out of the “Renewable Energy Valleys” (REVs) – resilient regional multi-energy systems that aim to increase energy security while accelerating the green transition in Europe. Empa is a partner of the multinational consortium.

Intel announced that its technology is helping power the Edge for Smart Secondary Substations (E4S) Alliance’s new solution to modernize the energy grid. The E4S solution disrupts the existing system, helping it move from a proprietary, closed-hardware architecture to an open, flexible, software-defined energy system.

Northvolt announced a state-of-the-art sodium-ion battery, developed for the expansion of cost-efficient and sustainable energy storage systems worldwide. The cell has been validated for a best-in-class energy density of over 160 watt-hours per kilogram at the company’s R&D and industrialization campus, Northvolt Labs, in Västerås, Sweden.

Tektronix dives into the most common methodology for dynamic characterization of Wideband gap switching devices and discuss best practices and setup to determine accurately all switching parameters.

Choosing the optimum programmable AC source or DC supply for your application extends well beyond choosing AC or DC and a voltage, current, and frequency rating.

There is a growing demand for more effective assembly technologies. This paper presents the results of laser welding, which connects the copper (Cu) terminal to the Direct Copper Bonded (DCB) substrate within the power semiconductor discrete package.

Learn how to enable your Oscilloscope to carry out stable and accurate measurements on PWM waveforms.

A laser diode is an emitting device in the power industry that produces a sharp monochromatic output. The small device is very useful in power electronics due to its high efficiency, fast switching capability, and ability to transmit signals over optical media.

Hitachi Energy presented its groundbreaking solution to protect distribution transformers from transient voltage: Transformers with Transient Voltage Protection (TVP®) Technology. It is another milestone for the company’s commitment to developing innovative solutions for the energy industry. The solution sets new heights of reliability and resilience for transformers.

A wafer in a foundry cannot “electrically” behave like a semiconductor. In fact, a material’s conductivity is a function of added impurities. Doping is the process of making semiconductors more conductive, in simple words, converting wafers into semiconductors.

Each semiconductor chip has a circuit design to operate and perform its designated function. These circuits are first designed, simulated, and tested on EDA (electronic design automation) tools. In fabrication facilities (fabs or foundries), circuits are often called patterns. The complex manufacturing processes enable the precise creation of detailed patterns on chips.

NXP Semiconductors expands its scalable S32 vehicle compute platform with the introduction of the S32M2. The purpose-built motor control solution is optimized for efficiency improvement across vehicle applications such as pumps, fans, sunroof and seat position, seat belt pretensioners, trunk openers and more. Building on the success of the S12 MagniV® portfolio, the S32M2 combines NXP’s motor control heritage and the software development benefits of the S32 platform.

Siemens Digital Industries Software unveiled Tessent™ RTL Pro, a software solution developed to help integrated circuit (IC) design teams streamline and accelerate a broad array of critical design-for-test (DFT) tasks for their next-generation designs.

TSMC has announced the new 3Dblox 2.0 open standard and major achievements of its Open Innovation Platform® (OIP) 3DFabric Alliance. The 3Dblox 2.0 features early 3D IC design capability that aims to significantly boost design efficiency, while the 3DFabric Alliance continues to drive memory, substrate, testing, manufacturing, and packaging integration.

Keysight Technologies, Inc., Synopsys, Inc., and Ansys have announced a new reference flow for the TSMC N4PRF, the world's leading semiconductor foundry's advanced 4 nanometer (nm) radio frequency (RF) FinFET process technology.