Products & Applications AUKEY debuts world's fastest chargers at CES
The global technology leader AUKEY debuts the AUKEY Omnia Series at the Consumer Electronics Show (CES) in Las Vegas this week (January 7-9, 2020).
Consumer Electronics Show (CES) has served as the proving ground for innovators and breakthrough technologies for 50 years. CES 2020 is currently taking place at the Las Vegas Conference Center. With over 100 exhibitors, the competition of the 17,500 visitors' attention is fierce.
One new product getting a lot of buzz is the global technology leader AUKEY's new AUKEY Omnia Series. The new line of gallium nitride (GaN) chargers delivers some of the world's fastest charging speeds and will feature five power delivery (PD) chargers.
Smaller than half a stock MacBook 13-inch charger
Designed to provide users with a smaller, lighter, and more powerful mobile charging experience, the chargers in the Omnia Series are up to 66 percent smaller when compared with stock MacBook 13-inch chargers.
Whether it's getting more from a new device or unlocking greater performance from an older one, the Omnia Series offers a range of products with varying levels of power and size.
The Omnia Series will be available online and at retail in Q2 2020.
"As the producer of the world's smallest PD chargers, the Omnia Series is a natural next step in our line and one that delivers on our promise while creating a reliable, compact charging experience," said Lu Haichuan, CEO of AUKEY in a press release.
GaN is a next-generation semiconductor material
With the Omnia Series, AUKEY is introducing OmniaChip, a range of brand new integrated circuits (ICs) built into the five chargers in the new line. Developed in partnership with Navitas, inventor of the industry's first GaN power ICs, the chips are designed to increase both switching speeds and energy savings. GaN is a next-generation semiconductor material with 100x the speed of old silicon technology.
When comparing GaN and silicon, the bandgap is a good place to start. GaN's bandgap is 3.4 eV, whereas silicon has a value of just 1.12 eV. This means GaN semiconductors can sustain higher voltages and survive higher temperatures than silicon MOSFETs. Also, the current can travel faster through GaN semiconductors, ensuring greater efficiency and fewer switching losses when they are used in hard-switching applications.
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