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:quality(80)/p7i.vogel.de/wcms/c6/40/c6402002803976482536695757fbd1dc/91489330.jpeg "Patrick Hofstetter achieved first place with "Parasitic turn-on of SiC MOSFETs-Turning a bug into a feature" at the PCIM Young Engineer Award 2020. (Source: Power & Beyond)")
:quality(80)/p7i.vogel.de/2zR2WRYfbvViTpaaCazPa3mlW-Q=/500x500/wcms/5f/58/5f5896751f890/1--kopie.jpeg "Dr. Patrick Hofstetter ♥ Power & Beyond")
Dr. Patrick Hofstetter
Development Engineer
Siemens AG
Patrick Hofstetter received his bachelor's and master's degree in electrical engineering from the Friedrich-Alexander University Erlangen-Nuremberg in 2014 and 2016, respectively. From 2017-2019 he was working at the University of Bayreuth, where he did research on various ruggedness, protection, and optimization topics of SiC MOSFETs and where he wrote his doctoral thesis on the highest utilization of SiC MOSFETs in traction converters. At the beginning of 2020, he has joined the Siemens AG to work on medium voltage converters at Siemens Large Drives Applications.
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