SEMICONDUCTOR TECHNOLOGY GaN takes over mobile device charging
Gallium nitride (GaN) is a very promising material that has demonstrated the capability to displace silicon semiconductors in power conversion, RF, and analogue applications.
GaN is also a material that can be used in the production of semiconductor power devices, as well as RF components and light-emitting diodes (LEDs). Due to its properties such as speed—GaN runs up to 20 times faster than Silicon—it has attracted a lot of attention from researchers as a next-generation semiconductor technology. Now, it is set to take over mobile device charging through GaNFast.
Produced by Navitas Semiconductor Inc. since 2018, GaNFast power ICs enable a range of mobile device chargers that now includes over 50 GaNFast-enabled mobile fast-charging products and platforms. These enable power systems to run up to 100 times faster than traditional silicon while simultaneously delivering 3x the power density and system costs reduced by up to 20%.
Since 2018, millions of products have relied on GaN chargers to power their devices, and it has quickly become a trusted and mainstream technology. Stephen Oliver, Vice President of Sales and Marketing at Navitas Semiconductor Inc. said: “Accelerating beyond 50 fast-charger products and platforms is a significant achievement, because it means that GaN is a trusted, mainstream technology and every OEM and Original Design Manufacturing (ODM) in the industry can move quickly to participate in the creation of a new GaNFast charger product category.”
The ever-increasing demand for more powerful consumer electronics like smartphones, tablets, and laptops with larger battery capacities and 5G capability has created what is now a multi-billion-dollar market for next-generation fast chargers.
It is not only in the arena of consumer electronics and charging solutions where GaN is making a name for itself. In data centers, GaN-based power ICs are helping process higher amounts of data at a lower cost and in LEDs, GaN-based power ICs bring significant improvements in power density for LED drivers with, again, increased energy savings and lower system costs.