High volume applications like EVs demand outstanding power density, low losses and high switching frequency. GaN devices are a suitable answer for these requests featuring reduced switching losses yielding higher efficiency at higher frequency operation. Thus, GaN has the potential to substitute silicon MOSFETs in the 650 V range due to lower conduction and significantly lower switching losses.

The webconference offers an excellent overview of GaN technology with all its advantages especially for high volume markets. The benefits in terms of their switching capability as well as the advantages of scalability and of high volume production are presented and thoroughly discussed.

Main topics of the web conference:

• High-performance characteristics of Power GaN FETs and application requirements
• Topologies and controller solution that enable high density design with GaN
• Impact of parasitic inductances to GaN performance and methods of improvement
• Gate drive requirements and solution for optimal GaN operation
• Options for a market demanding extra power at fast growing rate

Slot 1 - Why volume applications are selecting high performance GaN (Nexperia)

GaN is a wide bandgap semiconductor material. Due to its material properties, and the formation of a 2DEG electron gas in a GaN HEMT makes it an ideal substitute for existing Si solutions. Commercial GaN devices are available up to 650 V and are up to 900 V at research level. Ease of scalability in GaN technology enables it to meet rapidly growing demands in the EV market. This is feasible due to two main reasons – 1. use of 8” Si substrate to grow various GaN layers and potential to move to 12” Si substrates in future, 2. use of existing Si foundries to process GaN wafers.

A unique cascode solution provided by NX and its unmatched benefits e.g., TJ = 175 C, compatibility with well-known Si MOSFET gate drivers, to name a few, makes it an ideal fit for the electrification of various technologies and finally tackling the challenge of climate change. In this presentation we will cover three main topics

1. Looking into the high-performance characteristics of Power GaN FETs
2. Application requirements for such performance
3. The scalability options for a market demanding extra power at fast growing rate

Slot 2 - Why volume applications are selecting high performance GaN (onsemi)

The push for ultra power density power solution has made Wide Bandgap semiconductor materials like GaN interesting for reducing switching losses, which can yield higher efficiency or higher frequency operation. GaN has the potential to take or from silicon MOSFET in the 650 V space due to lower conduction loss and significantly lower switching loss.

In this presentation we will cover three key areas of advancement in the GaN's semiconductor ecosystem that allow it to be adopted in volume applications:

1. Gate drive requirements and solution for optimal GaN operation
2. Topologies and controller solution that enable high density design with GaN
3. Impact of parasitic inductances to GaN performance and methods of improvement

Your speakers

Prof. Dr.-Ing. Mario Pacas

Professor for Power Electronics and Electrical Drive Technology
University of Siegen

Roman Stuler

Application Manager, Power Conversion Solution Business Unit
onsemi

Dr. Yogesh Sharma

IPMM GaN Commercial & Marketing
Nexperia B.V.

Bildquelle: Mario Pacas, On Semiconductor, Nexperia B.V.