Interpretation of temperature average by VCE(T)-method

The VCE(T)-method is the favored approach to determine the temperature of IGBTs by utilizing the almost linear temperature dependence of forward voltage drop at small constant collector current. The method provides a virtual temperature value reflecting an average of the lateral temperature distribution across the IGBT. The present study reveals that averaging is strongly affected, when the lateral temperature gradient is enlarged by reduced load pulse duration and imbalanced heating of paralleled chips. This should be taken into account for interpretation of the virtual temperature value, especially when device aging by power cycling is considered.

 

From this whitepaper you can learn:

• How to reproduce the virtual junction temperature by IR imaging
• How enlarged temperature gradients influence the averaging of VCE(T)-method
• How aging mechanisms during power cycling influence the temperature evolution
• What are the limitations of VCE(T)-method