PCIM EUROPE 2022 MOSFETs take over PCIM Europe
Offering huge leaps in specs and packaging options, semiconductor manufacturers revealed a variety of new MOSFET devices at the PCIM Europe 2022 event in mid-May.
PCIM Europe 2022 was, as is typical for the world’s leading power electronics exhibition, a predictably busy affair, packed full of new and exciting product showcases and developments in the space. This year, the SiC FET and MOSFET product categories were particularly well-represented, with devices on show offering leading-edge performance and all-new packaging options.
MOSFETs for switched-mode power supplies
At this year’s event, STMicroelectronics launched the very first of its MDmesh M9 and DM9 MOSFETs. These devices are N-channel super-junction multi-drain silicon power MOSFETs, and the company is targeting switched-mode power supplies used in applications including 5G infrastructure and data centers with them.
The first two chips to debut from this series are the 650 V STP65N045M9 and the 600 V STP60N043DM9, with a maximum RDS(on) of 45 mΩ and 43 mΩ respectively. STMicro says that the low RDS(on) specs help to maximize power density and enable designs with more compact footprints. The devices also offer a low gate charge of 80 nC at 400 V drain voltage.
The MDmesh M9s feature lower switching losses thanks to a gate threshold voltage of 3.7 V for the STP65N045M9 and 4.0 V for the STP60N043DM9. STMicro says that those specs will help to boost efficiency and switching performance.
MOSFETs with fast reverse recovery
ROHM is also offering a selection of new super junction MOSFET devices, adding seven to its PrestoMOS family. Named the R60 VNx series, these 600 V super junction MOSFETs are notable for their low reverse recovery times.
This series of devices is aimed at power circuitry in a variety of system designs including servers, electric vehicle (EV) charging, and base stations. ROHM also says that this series is also suitable for motor drives in white goods and similar product designs. ROHM also says that the new series of MOSFETs uses the company’s latest processes to reduce RDS(on) per unit by as much as 20 percent when compared to equivalent products.
A 1200 V SiC FET for 800 V EV chargers
At the event, Qorvo announced six new entrants to its Gen 4 series of 1200 V Silicon Si FETs. According to the company, the new UF4C/SC series of SiC FETs are particularly suited for mainstream 800 V bus architectures in onboard EV chargers, industrial battery chargers, and industrial power supplies. Other possible applications that have been given include uninterruptable power supplies and induction heating.
RDS(on) options for this series include 23 mΩ, 30 mΩ, 53 mΩ, and 70 mΩ, and Qorvo claims that these devices provide best-in-class SiC FET “figures of merit.”
A sign of things to come
PCIM Europe 2022 featured a huge number of new innovations in SiC FET and MOSFET technologies, and those featured in this article are only a small snapshot of the many power devices that were announced at the event last week, all of which demonstrate a clear trend—semiconductor manufacturers in the power electronics field are quickly making great advances in many critical areas, including packaging innovations, RDS(on), and more.