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INTEGRATED CIRCUITS Navitas GaN ICs drive Samsung Galaxy S22 fast charging

From Nicole Kareta

Navitas Semiconductor, a specialist in gallium nitride (GaN) power integrated circuits has announced that its GaNFast technology has been selected for Samsung’s flagship Galaxy S22 Ultra and S22+ smartphones. The small, powerful 45W Super Fast charger has the highest power density of any Samsung charger, enabled by GaNFast power ICs.

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Measuring only 47.4 x 27.9 x 43.6 mm (57.7 cc) the new Samsung fast charger achieves a power density over 1 W/cc.
Measuring only 47.4 x 27.9 x 43.6 mm (57.7 cc) the new Samsung fast charger achieves a power density over 1 W/cc.
(Source: spainter_vfx - stock.adobe.com)

The S22 Ultra, with 6.8” screen and 5,000 mAhr battery, and the S22+ (6.6” screen, 4,500 mAhr) are the latest-generation flagship smartphones from Samsung. The GaNFast 45W charger (model #EP-T4510) delivers fast-charging power across the complete USB-PD and PPS specification. Measuring only 47.4 x 27.9 x 43.6 mm (57.7 cc) the new Samsung fast charger achieves a power density over 1 W/cc.

GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon chips. Navitas’ proprietary GaN power ICs integrate GaN power (FET) and GaN drive plus control and protection in a single SMT package. The result is easy-to-use, high-speed, high-performance ‘digital-in, power-out’ building blocks that deliver up to 3x faster charging in half the size and weight, and with up to 40 % energy savings compared with earlier silicon solutions.

“Samsung customers appreciate leading-edge technology with innovation, performance and quality,” said Gene Sheridan, CEO and co-founder of Navitas. “Samsung and Navitas are aligned in providing next-generation performance while ensuring a focus on efficiency and sustainability. GaN delivers significant benefits to the planet – for every GaNFast power IC shipped reduces CO2 emissions by 4 kg.”

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