New gallium oxide-based transistor can handle 8,000 volts
Researchers at The State University of New York Buffalo (UB) have developed a gallium oxide based MOSFET that can handle extremely high voltages of 8,000 V because of its ultra-wide band gap.
(Picture: gemeinfrei)
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/cdn4.vogel.de/infinity/white.jpg "Researchers at The State University of New York Buffalo (UB) have developed a gallium oxide based MOSFET that can handle extremely high voltages of 8,000 V because of its ultra-wide band gap.")
