New SiC MOSFETs for industrial equipment with four-pin package to reduce switching loss

TRANSISTOR TECHNOLOGY New SiC MOSFETs for industrial equipment with four-pin package to reduce switching loss

31.08.2023 From Toshiba (Press release) Reading Time: 1 min |

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Toshiba Electronic Devices & Storage Corporation (Toshiba) has launched silicon carbide (SiC) MOSFETs, the "TWxxxZxxxC series,” that use a four-pin TO-247-4L(X) package that reduces switching loss with the company’s latest¹⁾ 3rd generation SiC MOSFETs chip for industrial equipment. Volume shipments of ten products, five with 650V ratings and five with 1200V, start today.

Toshiba will continue to expand its line-up to meet market trends and contribute to improving equipment efficiency and enlarging power capacity.
(Source: Toshiba)

The new products are the first in Toshiba’s SiC MOSFET line-up to use the four-pin TO-247-4L(X) package, which allows Kelvin connection of the signal source terminal for the gate drive. The package can reduce the effect of source wire inductance inside the package, improving high-speed switching performance. For the new TW045Z120C, the turn-on loss is approximately 40 % lower and the turn-off loss reduced by approximately 34 %²⁾, compared with Toshiba’s current product TW045N120C in a three-pin TO-247 package. This helps to reduce equipment power loss.
A reference design for a Three-phase inverter using SiC MOSFETs is published online. Toshiba will continue to expand its line-up to meet market trends and contribute to improving equipment efficiency and enlarging power capacity.

Three-phase inverter using the new SiC MOSFETs

Applications

Switching power supplies (servers, data centers, communications equipment, etc.)

EV charging stations

Photovoltaic inverters

Uninterruptible power supplies (UPS)

Features

Four-pins TO-247-4L(X) package:

Switching loss is reduced by Kelvin connection of the signal source terminal for the gate drive

3rd generation SiC MOSFETs

Low drain-source On-resistance x gate-drain charge

Low diode forward voltage: V_DSF=-1.35V (typ.) (V_GS=-5V)

¹⁾ As of August 2023.
²⁾ As of August 2023, values measured by Toshiba (test condition: V_DD=800V, V_GG=+18V/0V, I_D=20A, R_G=4.7Ω, L=100μH, T_a=25 °C)

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