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semiconductors Nexperia's new 650 V GaN technology announced

| Author / Editor: Luke James / Johanna Erbacher

Nexperia, the industry expert in essential semiconductors, has recently announced a new range of GaN FET devices that reportedly achieve superior switching FOMs and on-state performance with improved stability.

Nexperia's new series of GaN-FET devices achieve superior switching FOMs and on-state performance with improved stability.
Nexperia's new series of GaN-FET devices achieve superior switching FOMs and on-state performance with improved stability.
(Source: Nexperia)

Nexperia has recently announced its new range of GaN FET devices that feature next-gen high-voltage GaN high electron mobility transistor (HEMT) H2 technology in both TO-247 and the company’s own IP CCPAK surface mount packaging.

Designed to target 5G, automotive, and datacentre applications, the new devices achieve superior switching FOMs and on-state performance with much better stability. They also simplify application design thanks to their cascode configuration which eliminates the need for complex drivers and controls. The new product line is presently available for automotive applications (AEC-Q101) and industrial use (TO-247).

“Customers need a solution for power conversion at 650V and around 30-40 mΩ RDS(on), where applications include on-board chargers, dc-dc converters and traction inverters in electric vehicles,” said Dilder Chowdhury, Nexperia’s director of marketing.

Nexperia already offers a 50 mΩ GaN HEMT built on its H1 process IP and was developing a 35 mΩ solution until the company realised that reducing the resistance required a large die, making it too expensive. This problem was exacerbated by the nature of the company’s H1 technology—it features a floating substrate that requires an elaborate package that incorporates an internal insulating shim to isolate the back of the GaN die. The move to H2 technology, which has through-epi vias, reduced the die’s size, mitigated defects and eliminated the need for an insulating shim. RDS(ON) is also reduced to just 41 mΩ (max., 35 mΩ typ. at 25 °C) with H2. This reduction will increase further to 39 mΩ with CCPAK surface-mount versions. Because the parts are configured as cascode devices, they can be driven using standard Si MOSFT drivers.

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Nexperia’s CCPAK surface mount packaging IP incorporates Nexperia’s copper-clip package IP to replace internal bond wires. This reduces parasitic losses, optimises performance, and improves reliability. CCPAK GaN FETs are available in both top- and bottom-cooled configurations, making them extremely versatile.

“Nexperia continues to invest in the development and expansion of its range of products using next generation GaN processes, initially releasing traditional TO-247 versions and bare die format for power module makers, followed by our high-performance surface mount CCPAK packages,” added Chowdhury.

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