HOW TO ACHIEVE UNPRECEDENTED POWER DENSITY LEVELS
Next Generation GaN-based Architectures
This paper demonstrates how the inherent advantages of GaN power devices can faciliate the design of systems with power densities far beyond state-of-the-art Silicon systems. This is shown for 240W USB-C chargers and 3-phase 11kW on-board chargers.
The inherent advantages of GaN devices compared to their Silicon counterparts, i.e. absence of reverse recovery charge, lower output and gate charges, etc., enable the operation of power electronic systems based on GaN devices at considerably higher switching frequencies. This facilitates the design of systems with power densities far beyond the limits of state-of-the-art Si systems, which is demonstrated in this paper with two very different examples: a 240 W mobile charger with two USB-C output ports covering very wide output voltages of 5-48 V, and a three-phase 11 kW on-board charger with an output voltage range of 250-1000 V.
This paper explains:
- The key differences of GaN devices compared to Si devices
- The challenges in the design of the next-gen USB-C and on-board chargers
- Which topologies are best suited for these applications
- How to use advanced modulation schemes for the highest performance
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