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MOSFET ON Semiconductor Announces New 900 V and 1200 V SiC MOSFETs for Demanding Applications

| Author / Editor: Emmanuel Odunlade / Erika Granath

ON Semiconductors's new SiC MOSFETs offers performance, reliability, and efficiency at levels beyond what is obtainable with Silicon (Si) MOSFETs.

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ON Semiconductors's new SiC MOSFETs offers performance, reliability, and efficiency at levels beyond what is obtainable with Silicon (Si) MOSFETs.
ON Semiconductors's new SiC MOSFETs offers performance, reliability, and efficiency at levels beyond what is obtainable with Silicon (Si) MOSFETs.
(Source: ON Semiconductor)

Leading Semiconductor components manufacturer ON Semiconductor recently announced the expansion of their Wide BandGap solution offerings with the launch of two new families of SiC MOSFETs; the 900V and the 1200V MOSFETs, developed for applications with high-reliability requirements.

The Silicon Carbide (SiC) based MOSFETs were designed to provide high-level reliability and efficiency to match the growing and rigorous demands of power applications such as Electric Vehicle Charging Stations, Power Supply for Data Centers/Servers, Uninterruptible Power Supply, and Solar Power Supply Applications.

Thanks to the Chemistry of the Silicon-Carbide combination, SiC MOSFETs have characteristics like; a lower 'on' resistance, a higher thermal conductivity, and no (or little) "tail" current during switching. The SiC MOSEFTs' characteristics ensure a faster-switching operation with a significant reduction in power losses compared to Silicon (Si) MOSFETs.

Added benefits of Silicon-Carbide

Asides from energy savings, the low "on" resistance features of SiC also increases the possibilities around package miniaturization, leading to a small, compact chip with very low capacitance and gate charge. The low capacitance and gate charge reduces switching losses when operating at high frequencies. This makes the operation of SiC MOSFETs at high frequencies (for improved efficiency), without EMI and related problems, possible.

All characteristics mentioned above enable the new SiC MOSFETs to offer various features. Below are a few examples:

  • high current ratings (103 A (ID Max.) for the 1200 V, and up to 118A for the 900V,
  • better avalanche capabilities,
  • better short circuit robustness, and higher surge ratings, all of which help deliver a higher level of reliability, efficiency, and longer lifetime. The workhorse nature requires the latter from modern power applications like EV Charging Stations or Uninterruptible Power Supplies.

Commenting on the new SiC MOSFET devices, Gary Straker, Vice President/General Manager, Power MOSFET Division, Power Solutions Group, ON Semiconductor said: "If design engineers are to meet the challenging efficiency and power density goals that modern renewable energy, automotive, IT and telecom applications demand, then they require high performance, high reliability MOSFET devices. ON Semiconductor's WBG SiC MOSFETs extend performance beyond what was possible with silicon devices, delivering lower losses, higher operating temperatures, faster switching, improved EMI and better reliability. Further supporting the engineering community, ON Semiconductor provides a wide range of resources and tools that simplify and speed up the design process."

All of ON Semiconductor's SiC MOSFETs are Pb-free and Halide free, and the devices intended for automotive applications are AEC-Q100 qualified and PPAP capable. All devices are offered in industry standard TO-247 or D2PAK packages.

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