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Parasitic turn-on of SiC MOSFETs-Turning a bug into feature
Many publications have already dealt with the unwanted parasitic turn-on (PTO) of semiconductor devices and how to get rid of it. But in the same-titled paper, it was shown that high power applications may even benefit from a small PTO.
need to be of a disadvantage. It is shown that a small PTO can even be used to lower the maximum
overvoltage at the body diode during the diode turn-off. In applications where this is the limiting condition for
the switching speed, this means that the SiC MOSFET turn-on can be accelerated leading to significantly
This paper contains:
- Measurement of the turn-on
- Taking advantage of PTO in order to save turn-on losses
- Using the full potential of PTO
- Conclusion and Outlook
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