Discover the PCIM Europe



Parasitic turn-on of SiC MOSFETs-Turning a bug into feature

Many publications have already dealt with the unwanted parasitic turn-on (PTO) of semiconductor devices and how to get rid of it. But in the same-titled paper, it was shown that high power applications may even benefit from a small PTO.



This paper shows, that the usually unwanted parasitic turn-on (PTO) in SiC MOSFETs does not always
need to be of a disadvantage. It is shown that a small PTO can even be used to lower the maximum
overvoltage at the body diode during the diode turn-off. In applications where this is the limiting condition for
the switching speed, this means that the SiC MOSFET turn-on can be accelerated leading to significantly
lower losses.

This paper contains:
  • Introduction
  • Measurement of the turn-on
  • Taking advantage of PTO in order to save turn-on losses
  • Using the full potential of PTO
  • Conclusion and Outlook

By clicking on "Download With Free Account" I agree that MESAGO Messe Frankfurt GmbH transmits my data to MESAGO Messe Frankfurt GmbH that they uses my data for the advertising of his product also by email and telephone. For this purpose he receives my address and contact data, as well as data to prove this consent, which he processes on his own responsibility.
You have the right to revoke this consent at any time with effect for the future. If the responsible recipient is located in a country outside the EU, we must inform you that the level of data protection may be lower than in the EU.

The provider of this whitepaper

Power & Beyond - Mesago Messe Frankfurt GmbH

Rotebühlstr. 83-85
70178 Stuttgart

This download is provided to you by third parties (eg the manufacturer) or from our editorial staff free of charge.

Other whitepapers