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MOBILITY ELECTRONICS Power Integrations introduces latest automotive-qualified Qspeed silicon diodes with high switching speeds

Editor: Florian Richert

Power Integrations, an expert in high-voltage integrated circuits for energy-efficient power conversion, announced its 600 V 12 A Qspeed diode, delivering the industry’s lowest reverse recovery charge (Qrr) for a silicon diode.

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Power Integrations Automotive-Qualified Qspeed Silicon Diodes Feature Lowest Qrr for Efficient, High-Switching-Speed Designs.
Power Integrations Automotive-Qualified Qspeed Silicon Diodes Feature Lowest Qrr for Efficient, High-Switching-Speed Designs.
(Source: Power Integrations Inc.)

With a Qrr of just 14 nC at 25 °C, Power Integrations improves the PFC stage of onboard chargers and significantly reduces the thermals of the PFC MOSFETs. The AEC-Q101-qualified QH12TZ600Q offers the same low-switching loss performance as silicon carbide (SiC) device without the disadvantages of moving to more expensive technology.

High system efficiency

Edward Ong, senior product marketing manager at Power Integrations, said: “The Qrr of these new Qspeed diodes is half that of the next best ultra-fast silicon diodes, resulting in very high system efficiency. This is particularly important for automotive onboard charger applications that require higher switching frequency to reduce volume and weight and enables the Qspeed diodes to replace SiC devices.”

Excellent thermal performance

The QH12TZ600Q uses merged PiN and Schottky diode technology to achieve high performance. Its smooth reverse recovery current transition characteristics increase efficiency and reduce EMI and peak reverse voltage stress, eliminating the need for snubbers when used as output rectifiers in onboard chargers. Devices are available in the compact, 2.5 kV isolated TO-220 package, enabling direct mounting to metal heat sinking, facilitating excellent thermal performance.

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