:quality(80)/images.vogel.de/vogelonline/bdb/1786100/1786138/original.jpg)
Whitepaper
PCIM EUROPE CONFERENCE
SiC power module for high-temperature automotive application
Wide band-gap power semiconductor devices such as SiC and GaN devices break thermal operating limits and switching speed limits of the Si semiconductors.
Vendors
:quality(90)/images.vogel.de/vogelonline/bdb/1744300/1744303/original.jpg)
This paper contains:
- Introduction
- Power module design concept
- Power module design
- System integration design
- Manufacturing steps
- Clean signal strategy for double pulse measurement
- Determination of DC link inductance with distributed DC link capacitance
- Comparison with classical wirebonded
power module - Conclusion and further steps
This download is provided to you by third parties (eg the manufacturer) or from our editorial staff free of charge.
Other whitepapers
:quality(80):fill(efefef,0)/images.vogel.de/vogelonline/bdb/1743100/1743187/original.jpg)
PCIM EUROPE CONFERENCE
Parasitic turn-on of SiC MOSFETs-Turning a bug into feature
Many publications have already dealt with the unwanted parasitic turn-on (PTO) of semiconductor devices and how to get rid of it. But in the same-titled paper, it was shown that high power applications may even benefit from a small PTO.
more...:quality(80):fill(efefef,0)/images.vogel.de/vogelonline/bdb/1783100/1783113/original.jpg)
DOSSIER ENERGY STORAGE
Stationary energy storage systems
To reduce our carbon footprint by electrifying society, massive deployment of renewable energy sources has become mandatory. This requires grid-tied energy storage system to balance energy production and consumption demands, to help grid stability.
more...