HIGH-VOLTAGE GATE DRIVER ST unveils high-voltage gate driver with 6kV galvanic isolation
STMicroelectronics has unveiled a 1200 V gate driver which can sink and source up to 4A of output current, helping to simplify the design and enhance the reliability of mid- and high-power converters, inverters, and power supplies in electronics.
STMicroelectronics, a global semiconductor industry leader known for delivering intelligent and energy-efficient products and solutions that power the electronics at the heart of modern society, unveiled the newest of its gate drivers in November.
The high-voltage gate driver, STGAP2HS, is an ultra-compact solution for applications that require up to 6kV galvanic isolation between the gate-driving channel and the low-voltage control and interface circuitry. With a voltage of 1200V, the device is able to source up to 4A output current which simplifies the design and enhances the reliability of mid- and high-power converters, power supplies, and inverters in electronics from home devices to complex industrial equipment like factory automation systems, induction heaters, and welders.
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The device features dual input pins that provide designers with complete control over signal polarity and provides interlocking protection in hardware to prevent cross conduction in the case of a controller malfunction. Its inputs are compatible with CMOS/TTL logic down to 3.3V, enabling easy interfacing with control devices.
Features at a glance:
- High voltage rail up to 1200 V
- 75ns I/O propagation delay
- Separate sink and source option
- ULVO function
- 4 A Miller CLAMP dedicated pin option
- Gate driving voltage up to 26 V
- Standby function
- Temperature shut-down protection
- 6 kV galvanic isolation
- dV/dt transient immunity ±100 V/ns in the full temperature range
Cycle distortion is prevented by matched propagation delays between the low-voltage and high-voltage sections. This also minimizes energy losses and allows high-frequency operation. Common-Mode Transient Immunity (CMTI) is ±100V/ns across the full temperature range of -40°C to 125°C. STMicro fabricated the gate driver using their novel BCD6s technology.
STGAP2HS is available in two configurations.
The first has separate output pins to allow independent optimization of turn-on and turn-off times using a dedicated gate resistor. The second configuration features a single output pin and a Miller-clamp function to prevent gate spikes during fast commutations in half-bridge topologies in high-density power converters.
Both configurations allow designers to use N-channel MOSFETs in both the high- and low-side bridge circuitry. This reduces the bill of materials for external components, potentially leading to cost savings that can be passed on to the customer.
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On top of over-temperature protection, the gate driver device integrates dedicated UVLO protection and thermal shutdown protection on both the low-voltage section and high-voltage driving channel. This boosts reliability by stopping power switches from taking place in low-efficiency.