HIGH-VOLTAGE GATE DRIVER ST unveils high-voltage gate driver with 6kV galvanic isolation

Related Vendors

PCIM Europe

Rogers Corporation

EA Elektro-Automatik GmbH & Co. KG

Diotec Semiconductor AG

AMETEK Programmable Power

more less

MESAGO Messe Frankfurt GmbH

onsemi

less

STMicroelectronics has unveiled a 1200 V gate driver which can sink and source up to 4A of output current, helping to simplify the design and enhance the reliability of mid- and high-power converters, inverters, and power supplies in electronics.

STMicroelectronics, a global semiconductor industry leader known for delivering intelligent and energy-efficient products and solutions that power the electronics at the heart of modern society, unveiled the newest of its gate drivers in November.

Technical information

The high-voltage gate driver, STGAP2HS, is an ultra-compact solution for applications that require up to 6kV galvanic isolation between the gate-driving channel and the low-voltage control and interface circuitry. With a voltage of 1200V, the device is able to source up to 4A output current which simplifies the design and enhances the reliability of mid- and high-power converters, power supplies, and inverters in electronics from home devices to complex industrial equipment like factory automation systems, induction heaters, and welders.

UNIQUE SENSOR SOLUTIONS

New collaboration in the field of sensor technologies

The device features dual input pins that provide designers with complete control over signal polarity and provides interlocking protection in hardware to prevent cross conduction in the case of a controller malfunction. Its inputs are compatible with CMOS/TTL logic down to 3.3V, enabling easy interfacing with control devices.

Features at a glance:

• High voltage rail up to 1200 V

• 75ns I/O propagation delay

• Separate sink and source option

• ULVO function

• 4 A Miller CLAMP dedicated pin option

• Gate driving voltage up to 26 V

• Standby function

• Temperature shut-down protection

• 6 kV galvanic isolation

• dV/dt transient immunity ±100 V/ns in the full temperature range

Cycle distortion is prevented by matched propagation delays between the low-voltage and high-voltage sections. This also minimizes energy losses and allows high-frequency operation. Common-Mode Transient Immunity (CMTI) is ±100V/ns across the full temperature range of -40°C to 125°C. STMicro fabricated the gate driver using their novel BCD6s technology.

PCIM EUROPE 2020

SiC power module for high-temperature automotive application

Available configurations

STGAP2HS is available in two configurations.
The first has separate output pins to allow independent optimization of turn-on and turn-off times using a dedicated gate resistor. The second configuration features a single output pin and a Miller-clamp function to prevent gate spikes during fast commutations in half-bridge topologies in high-density power converters.

Both configurations allow designers to use N-channel MOSFETs in both the high- and low-side bridge circuitry. This reduces the bill of materials for external components, potentially leading to cost savings that can be passed on to the customer.

IoT Solution Module

Electronics companies come together to deliver IoT module for smart applications

On top of over-temperature protection, the gate driver device integrates dedicated UVLO protection and thermal shutdown protection on both the low-voltage section and high-voltage driving channel. This boosts reliability by stopping power switches from taking place in low-efficiency.

(ID:47023853)