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TRANSISTOR TECHNOLOGY Toshiba launches 30V N-Channel common-drain MOSFET

From Toshiba Electronic Devices & Storage Corporation (Press release) Reading Time: 2 min |

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Toshiba Electronic Devices & Storage Corporation has launched “SSM10N961L,” a low on-resistance, 30V N-channel common-drain MOSFET, suitable for devices with USB and for protecting battery packs. Further Information about the new product is found in the article.

This release enables a broader range of applications, including devices with USB and protection for battery packs.
This release enables a broader range of applications, including devices with USB and protection for battery packs.
(Source: Toshiba Electronic Devices & Storage Corporation)

Until now, Toshiba’s line-up of N-channel common-drain MOSFETs has focused on 12V products, mainly for use in protecting the lithium-ion battery packs of smartphones. The release of a 30V product realizes a wider selection of applications requiring voltages higher than 12V, such as load switching for the power lines of USB charging devices, and the protection of lithium-ion battery packs in laptop PCs and tablets.

Realizing a bi-directional switch with a low drain-source on-resistance (RDS(ON)) has required two MOSFETs, either 3.3×3.3mm or 2×2 mm, with low RDS(ON). Toshiba’s new product uses a new, small, thin package TCSPAG-341501 (3.37mm×1.47mm (typ.), t=0.11mm (typ.)), and features low source-source on-resistance (RSS(ON)) of 9.9mΩ (typ.) in a single package common-drain configuration


Versatile load switching circuit options

USB Power Delivery (USB PD) that supports a power supply ranging 15W (5V / 3A) to a maximum of 240W (48V / 5A) was developed for devices requiring high power supply. USB PD specifies a role swap function for swapping the power supply and receiving side, and requires devices with USB charging to support bi-directional power supply, so that both sides can supply and receive power. The new product is an N-channel common-drain MOSFET that supports bi-directional power supply, and that has a small mounting area.

Combining the product with a driver IC in Toshiba’s TCK42xG series forms a load switching circuit with a backflow prevention function or a power multiplexer circuit that can switch operations between Make-Before-Break (MBB) and Break-Before-Make (BBM). Toshiba has today released a reference design for a power multiplexer circuit (using common-drain MOSFETs) based on this product combination. Use of the reference design will help to reduce product design and development times.


  • Smartphones
  • Laptop PCs
  • Tablets, etc.


  • High source-source voltage rating: VSSS=30V
  • Low on-resistance: RSS(ON)=9.9mΩ (typ.) (VGS=10V)
  • Common‐drain connection structure for bi-directional conduction
  • Small and thin type TCSPAG-341501 package: 3.37mm×1.47mm (typ.), t=0.11mm (typ.)

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